Results of the classic example, published in 1996.
A structure was used that does not accidentally look like a field transistor (Fig. 1a), where parts A and C simulate source and drain, B is a gate, parts D and E are wires situated partly far from and partly very close to large pads.
Special experiments were performed to demonstrate necessity of proximity
effect correction (PEC) and efficiency of the "simple compensation"
as a an approach of the proximity correction.
Qualitative coincidence of experimental structures with result of simulations
- Models of exposure and development implemented in NanoMaker
- Algorithms developed are working properly
- Exposure control provided by NanoMaker provides expected result